Semiconductor device and method of manufacturing the same

Disclosed are a semiconductor device having a vertical trench gate structure to improve the integration degree and a method of manufacturing the same. The semiconductor device includes an epitaxial layer having a second conductive type on a first conductive type substrate having an active region and...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	SIM GYU-GWANG,KIM JONG-MIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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