Method for fabricating capacitor in semiconductor device
A method for fabricating a capacitor in a semiconductor device is provided. The method includes forming an insulation layer over a substrate; flushing a metal source onto the insulation layer to change a characteristic of a surface of the insulation layer to improve adherence of a metal-based materi...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method for fabricating a capacitor in a semiconductor device is provided. The method includes forming an insulation layer over a substrate; flushing a metal source onto the insulation layer to change a characteristic of a surface of the insulation layer to improve adherence of a metal-based material to the surface of the insulation layer; forming a storage node comprising the metal-based material over the flushed insulation layer; and sequentially forming a dielectric layer and a plate electrode over the metal-based storage node. |
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