Manufacturing process of self-aligned silicide barrier layer

Manufacturing process of self-aligned silicide barrier layer

This invention discloses one process method for automatic self-calibrating silicon block layer, which comprises the following steps: firstly growing first layer of silica dioxide by use of CVD method; then using HDP method to grow second layer of silica dioxide on the first layer of silica dioxide l...

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1. Verfasser: HUALUN,ZHOU CHEN
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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description This invention discloses one process method for automatic self-calibrating silicon block layer, which comprises the following steps: firstly growing first layer of silica dioxide by use of CVD method; then using HDP method to grow second layer of silica dioxide on the first layer of silica dioxide layer. The invention can solve the stuff ability problem between calibration block layer and multiple transistor lines to overcome the whole phenomenon to lower leakage current.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Manufacturing process of self-aligned silicide barrier layer
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