Semiconductor device and method for manufacturing the same
A semiconductor device includes a MIS transistor formed in a region of a semiconductor region. The MIS transistor includes a gate insulating film formed on the region, a gate electrode formed on the gate insulating film and fully silicided with metal, source/drain regions formed in parts of the regi...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A semiconductor device includes a MIS transistor formed in a region of a semiconductor region. The MIS transistor includes a gate insulating film formed on the region, a gate electrode formed on the gate insulating film and fully silicided with metal, source/drain regions formed in parts of the region on the sides of the gate electrode and an insulating film formed to cover the gate electrode and the source/drain regions to cause stress strain in part of the region below the gate electrode. |
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