Very-long-wave mercury cadmium telluride infrared focal plane detector antireflective membrane and its preparing method

The antireflection coating is placed on photosensitive element array, area of signal extraction electrode, and common electrode area. The antireflection coating placed on the photosensitive element array is ZnS material with thickness 0.8-1.5 micros. The antireflection coating placed on the area of...

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1. Verfasser:	LONGYUAN,GONG ZHU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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