Method and apparatus for angular-resolved spectroscopic lithography characterisation
An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity o...
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| creator | DEN BOEF ARIE JEFFREY,BLEEKER ARNO JAN,VAN DOMMELEN YOURI JOHANNES LA,DUSA MIRCEA,KIERS ANTOINE GASTON MARIE,LUEHRMANN PAUL FRANK,PELLEMANS HENRICUS PETRUS MARI,VAN DER SOHAAR MAURITS,GROUWSTRA CEDRIC |
| description | An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized light and their relative phase difference. The apparatus according to the invention may be used for calculating variations in substrate tilt by putting a shaped obscuration in the radiation beam and detecting changes in the width and shape of the shaped obscuration on the substrate caused by variations in the substrate tilt. The shaped obscuration may be a cross-hair or any other shape. The idea of measuring wafer tilt is based on the fundamental relation that a tilt in the wafer plane causes a shift in the pupil plane. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN1916603A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN1916603A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN1916603A3</originalsourceid><addsrcrecordid>eNqFizEKwkAQRdNYiHoG9wIBQyBgKSFio1X6MGwm2YVlZ5iZCN7eLewtHh8e_-2r8YkWaHaQC8wgYJu6haSYdUsgtaBSeuPslNGbkHri6F2KpVsFOHycD6XzhhIVLFI-VrsFkuLpt4fqfB_G_lEj04TK4DGjTf2ruTZdd2lv7f_HF0OiOUI</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method and apparatus for angular-resolved spectroscopic lithography characterisation</title><source>esp@cenet</source><creator>DEN BOEF ARIE JEFFREY,BLEEKER ARNO JAN,VAN DOMMELEN YOURI JOHANNES LA,DUSA MIRCEA,KIERS ANTOINE GASTON MARIE,LUEHRMANN PAUL FRANK,PELLEMANS HENRICUS PETRUS MARI,VAN DER SOHAAR MAURITS,GROUWSTRA CEDRIC</creator><creatorcontrib>DEN BOEF ARIE JEFFREY,BLEEKER ARNO JAN,VAN DOMMELEN YOURI JOHANNES LA,DUSA MIRCEA,KIERS ANTOINE GASTON MARIE,LUEHRMANN PAUL FRANK,PELLEMANS HENRICUS PETRUS MARI,VAN DER SOHAAR MAURITS,GROUWSTRA CEDRIC</creatorcontrib><description>An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized light and their relative phase difference. The apparatus according to the invention may be used for calculating variations in substrate tilt by putting a shaped obscuration in the radiation beam and detecting changes in the width and shape of the shaped obscuration on the substrate caused by variations in the substrate tilt. The shaped obscuration may be a cross-hair or any other shape. The idea of measuring wafer tilt is based on the fundamental relation that a tilt in the wafer plane causes a shift in the pupil plane.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MATERIALS THEREFOR ; MEASURING ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070221&DB=EPODOC&CC=CN&NR=1916603A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070221&DB=EPODOC&CC=CN&NR=1916603A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DEN BOEF ARIE JEFFREY,BLEEKER ARNO JAN,VAN DOMMELEN YOURI JOHANNES LA,DUSA MIRCEA,KIERS ANTOINE GASTON MARIE,LUEHRMANN PAUL FRANK,PELLEMANS HENRICUS PETRUS MARI,VAN DER SOHAAR MAURITS,GROUWSTRA CEDRIC</creatorcontrib><title>Method and apparatus for angular-resolved spectroscopic lithography characterisation</title><description>An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized light and their relative phase difference. The apparatus according to the invention may be used for calculating variations in substrate tilt by putting a shaped obscuration in the radiation beam and detecting changes in the width and shape of the shaped obscuration on the substrate caused by variations in the substrate tilt. The shaped obscuration may be a cross-hair or any other shape. The idea of measuring wafer tilt is based on the fundamental relation that a tilt in the wafer plane causes a shift in the pupil plane.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MATERIALS THEREFOR</subject><subject>MEASURING</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqFizEKwkAQRdNYiHoG9wIBQyBgKSFio1X6MGwm2YVlZ5iZCN7eLewtHh8e_-2r8YkWaHaQC8wgYJu6haSYdUsgtaBSeuPslNGbkHri6F2KpVsFOHycD6XzhhIVLFI-VrsFkuLpt4fqfB_G_lEj04TK4DGjTf2ruTZdd2lv7f_HF0OiOUI</recordid><startdate>20070221</startdate><enddate>20070221</enddate><creator>DEN BOEF ARIE JEFFREY,BLEEKER ARNO JAN,VAN DOMMELEN YOURI JOHANNES LA,DUSA MIRCEA,KIERS ANTOINE GASTON MARIE,LUEHRMANN PAUL FRANK,PELLEMANS HENRICUS PETRUS MARI,VAN DER SOHAAR MAURITS,GROUWSTRA CEDRIC</creator><scope>EVB</scope></search><sort><creationdate>20070221</creationdate><title>Method and apparatus for angular-resolved spectroscopic lithography characterisation</title><author>DEN BOEF ARIE JEFFREY,BLEEKER ARNO JAN,VAN DOMMELEN YOURI JOHANNES LA,DUSA MIRCEA,KIERS ANTOINE GASTON MARIE,LUEHRMANN PAUL FRANK,PELLEMANS HENRICUS PETRUS MARI,VAN DER SOHAAR MAURITS,GROUWSTRA CEDRIC</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN1916603A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2007</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MATERIALS THEREFOR</topic><topic>MEASURING</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>DEN BOEF ARIE JEFFREY,BLEEKER ARNO JAN,VAN DOMMELEN YOURI JOHANNES LA,DUSA MIRCEA,KIERS ANTOINE GASTON MARIE,LUEHRMANN PAUL FRANK,PELLEMANS HENRICUS PETRUS MARI,VAN DER SOHAAR MAURITS,GROUWSTRA CEDRIC</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DEN BOEF ARIE JEFFREY,BLEEKER ARNO JAN,VAN DOMMELEN YOURI JOHANNES LA,DUSA MIRCEA,KIERS ANTOINE GASTON MARIE,LUEHRMANN PAUL FRANK,PELLEMANS HENRICUS PETRUS MARI,VAN DER SOHAAR MAURITS,GROUWSTRA CEDRIC</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method and apparatus for angular-resolved spectroscopic lithography characterisation</title><date>2007-02-21</date><risdate>2007</risdate><abstract>An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized light and their relative phase difference. The apparatus according to the invention may be used for calculating variations in substrate tilt by putting a shaped obscuration in the radiation beam and detecting changes in the width and shape of the shaped obscuration on the substrate caused by variations in the substrate tilt. The shaped obscuration may be a cross-hair or any other shape. The idea of measuring wafer tilt is based on the fundamental relation that a tilt in the wafer plane causes a shift in the pupil plane.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MATERIALS THEREFOR MEASURING ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES TESTING |
| title | Method and apparatus for angular-resolved spectroscopic lithography characterisation |
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