Light-emitting diode and its producing method
The invention relates to a light-emitting diode, and relative production, wherein said light-emitting diode comprises a base board, the first doping semi-conductor layer, a lighting layer, the second doping semi-conductor layer, the first dielectric layer, the first conductive plug, the first electr...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | The invention relates to a light-emitting diode, and relative production, wherein said light-emitting diode comprises a base board, the first doping semi-conductor layer, a lighting layer, the second doping semi-conductor layer, the first dielectric layer, the first conductive plug, the first electrode and the second electrode; the first doping semi-conductor layer is above the base board; the lighting layer and the second doping semi-conductor layer are above part of the first doping semi-conductor layer; the first dielectric layer is above part of first doping semi-conductor layer that not covered by lighting layer; the first electrode on the first dielectric layer is connected to the first doping semi-conductor layer via the first conductive plug of first dielectric layer; and the second electrode is connected to the second doping semi-conductor layer. |
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