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Concentration of metal element which promotes crystallization of silicon and which exists within a crystal silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is implemented after introducing nickel element to an amorphous silicon film 103. The...

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1. Verfasser:	YAMAZAKI SHUNPEI,TERAMOTO SATOSHI,KOYAMA JUN,OGATA YASUSHI,HAYAKAWA MASAHIKO,OSAME MITSUAKI,OHTANI HISASHI,HAMATANI TOSHIJI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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