Semiconductor device and fabrication process thereof

There is provided a semiconductor device having a device isolation region of STI structure formed on a silicon substrate so as to define a device region, wherein the device isolation region comprises a device isolation trench formed in the silicon substrate, and a device isolation insulation film fi...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	MORI TOSHIFUMI,OOKOSHI KATSUAKI,WATANABE TAKASHI,OHTA HIROYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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