Process for forming a dielectric on a copper-containing metallization and capacitor arrangement
The invention relates to a method that permits the direct application of a dielectric layer to a metallic layer containing copper. According to said method, two process gases (26, 28) are excited by means of respectively different plasma powers for each substrate surface or one of the process gases...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | GSCHWANDTNER ALEXANDER,HOLZ JUERGEN,SCHRENK MICHAEL |
| description | The invention relates to a method that permits the direct application of a dielectric layer to a metallic layer containing copper. According to said method, two process gases (26, 28) are excited by means of respectively different plasma powers for each substrate surface or one of the process gases (26) is excited by means of a plasma and the other process gas (28) is not excited. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN1875483A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN1875483A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN1875483A3</originalsourceid><addsrcrecordid>eNqFjLEKAjEQRNNYiPoN5geukFO89jgUK7GwD8ve3rGQbEKylV9vAvYWw2PgzWyNe-WIVIpdYm4JLKsFOzN5Qs2MNkrtGFOi3GEUBZbmBFLwnj-g3AyZLUICZK0_kDPISoFE92azgC90-HFnjvfbe3p0lKKjUhckpG56nobr5Tz0Y__f-AKvMTyT</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Process for forming a dielectric on a copper-containing metallization and capacitor arrangement</title><source>esp@cenet</source><creator>GSCHWANDTNER ALEXANDER,HOLZ JUERGEN,SCHRENK MICHAEL</creator><creatorcontrib>GSCHWANDTNER ALEXANDER,HOLZ JUERGEN,SCHRENK MICHAEL</creatorcontrib><description>The invention relates to a method that permits the direct application of a dielectric layer to a metallic layer containing copper. According to said method, two process gases (26, 28) are excited by means of respectively different plasma powers for each substrate surface or one of the process gases (26) is excited by means of a plasma and the other process gas (28) is not excited.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2006</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20061206&DB=EPODOC&CC=CN&NR=1875483A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20061206&DB=EPODOC&CC=CN&NR=1875483A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GSCHWANDTNER ALEXANDER,HOLZ JUERGEN,SCHRENK MICHAEL</creatorcontrib><title>Process for forming a dielectric on a copper-containing metallization and capacitor arrangement</title><description>The invention relates to a method that permits the direct application of a dielectric layer to a metallic layer containing copper. According to said method, two process gases (26, 28) are excited by means of respectively different plasma powers for each substrate surface or one of the process gases (26) is excited by means of a plasma and the other process gas (28) is not excited.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2006</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqFjLEKAjEQRNNYiPoN5geukFO89jgUK7GwD8ve3rGQbEKylV9vAvYWw2PgzWyNe-WIVIpdYm4JLKsFOzN5Qs2MNkrtGFOi3GEUBZbmBFLwnj-g3AyZLUICZK0_kDPISoFE92azgC90-HFnjvfbe3p0lKKjUhckpG56nobr5Tz0Y__f-AKvMTyT</recordid><startdate>20061206</startdate><enddate>20061206</enddate><creator>GSCHWANDTNER ALEXANDER,HOLZ JUERGEN,SCHRENK MICHAEL</creator><scope>EVB</scope></search><sort><creationdate>20061206</creationdate><title>Process for forming a dielectric on a copper-containing metallization and capacitor arrangement</title><author>GSCHWANDTNER ALEXANDER,HOLZ JUERGEN,SCHRENK MICHAEL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN1875483A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2006</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>GSCHWANDTNER ALEXANDER,HOLZ JUERGEN,SCHRENK MICHAEL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GSCHWANDTNER ALEXANDER,HOLZ JUERGEN,SCHRENK MICHAEL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Process for forming a dielectric on a copper-containing metallization and capacitor arrangement</title><date>2006-12-06</date><risdate>2006</risdate><abstract>The invention relates to a method that permits the direct application of a dielectric layer to a metallic layer containing copper. According to said method, two process gases (26, 28) are excited by means of respectively different plasma powers for each substrate surface or one of the process gases (26) is excited by means of a plasma and the other process gas (28) is not excited.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_CN1875483A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Process for forming a dielectric on a copper-containing metallization and capacitor arrangement |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T18%3A22%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=GSCHWANDTNER%20ALEXANDER,HOLZ%20JUERGEN,SCHRENK%20MICHAEL&rft.date=2006-12-06&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN1875483A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |