Contact scheme for memory array and manufacturing methods thereof

A method of making a memory device and a memory device is described. In one embodiment, a method of manufacturing a memory device is described. The method includes providing a substrate having a tunneling layer deposited on a main surface and having a first conductive lines arranged on the tunneling...

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Bibliographische Detailangaben

1. Verfasser:	WILLER JOSEF
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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