Silicon wafer and its heat treatment method
A silicon wafer having no epitaxially deposited layer or layer produced by joining to the silicon wafer, with a nitrogen concentration of 1·1013-8·1014 atoms/cm3, an oxygen concentration of 5.2·1017-7.5·1017 atoms/cm3, a central thickness BMD density of 3·108-2·1010 cm−3, a cumulative length of line...
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| creator | MOTY MILLER,W F. AMEN,A DOBU,P CROTENGEROL,C MESMAN,F PARSEK,L WORYSH,A QUHORN,J SHITUDENA |
| description | A silicon wafer having no epitaxially deposited layer or layer produced by joining to the silicon wafer, with a nitrogen concentration of 1·1013-8·1014 atoms/cm3, an oxygen concentration of 5.2·1017-7.5·1017 atoms/cm3, a central thickness BMD density of 3·108-2·1010 cm−3, a cumulative length of linear slippages 3 cm and a cumulative area of areal slippage regions 7 cm2, the front surface having 0.13 μm LSE in the DNN channel, a layer at least 5 μm thick, in which 1·104 COPs/cm3 with a size of 0.09 μm occur, and a BMD-free layer 5 μm thick. Such wafers may be produced by heat treating the silicon wafer, resting on a substrate holder, a specific substrate holder used depending on the wafer doping. For each holder, maximum heating rates are selected to avoid formation of slippages. |
| format | Patent |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Silicon wafer and its heat treatment method |
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