Non-volatile memory possessing a plurality of capture film

Provided is a nonvolatile memory device which includes a tunneling insulating film formed on a semiconductor substrate, a storage node formed on the tunneling insulating film, a blocking insulating film formed on the storage node, and a control gate electrode formed on the blocking insulating film....

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	GEUM CHOO-HAENG,HAHN CHONG-HEE,GEUM CHONG-WOO,MINYUE-SAI,GEUM MOON-GYONG,CHEONG NYON-SEOG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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