Plasma processing apparatus and method for producing same

A plasma processing apparatus is provided on the side to be directed to a workpiece W of electrodes 31, 32 with a conductive member 51 through an insulating member 41 . The insulating member 41 is sandwiched between the electrodes 31, 32 and the conductive member 51 . The dielectric constant and the...

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Bibliographische Detailangaben
1. Verfasser:	HINO MAMORU,MAYUMI SATOSHI,ITO TAKUMI,UEHARA TSUYOSHI,ONO TAKAYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A plasma processing apparatus is provided on the side to be directed to a workpiece W of electrodes 31, 32 with a conductive member 51 through an insulating member 41 . The insulating member 41 is sandwiched between the electrodes 31, 32 and the conductive member 51 . The dielectric constant and the thickness of the insulating member 41 are established such that the voltage applied to a gap 40 b formed between the insulating member 41 and the conductive member 51 becomes smaller than the sparking voltage. Owing to this arrangement, electrical discharge can be prevented from occurring in the gap 40 b and thus, the processing quality can be enhanced.