Method for forming a semiconductor device and structure thereof

Dummy features (64, 65, 48a, 48b) are formed within an interlevel dielectric layer (36). Passivation layers (32 and 54) are formed by electroless deposition to protect the underlying conductive regions (44, 48a, 48b and 30) from being penetrated from the air gaps (74). In addition, the passivation l...

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Bibliographische Detailangaben

1. Verfasser:	GOLDBERG CINDY K.,FILIPIAK STANLEY M.,FLAKE JOHN C.,LII YEONG-JYH T.,SMITH BRADLEY P.,SOLOMENTSEV YURI E.,SPARKS TERRY G.,STROZEWSKI KIRK J.,YU KATHLEEN C
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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