Semiconductor device and manufacturing method therefor

A semiconductor device is obtained, in which excellent characteristics are achieved, the reliability is improved, and an SiC wafer can also be used for the fabrication. A plurality of Schottky-barrier-diode units 10 is formed on an SiC chip 9, and each of the units 10 has an external output electrod...

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Bibliographische Detailangaben

1. Verfasser:	YUTANI NAOKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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