Etchant and etching method
Fluorescent probes represented by the general formula (I) wherein R and R are each hydrogen or a substituent for capturing a proton, a metal ion, or an active oxygen species; R is a monovalent substituent except hydrogen, carboxyl, and sulfo; R and R are each hydrogen, halogeno, or alkyl; R to R are...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | SAITO NORIYUKI,YOSHIDA TAKUJI,INOUE KAZUNORI,ISHIKAWA MAKOTO,KAMIHARAGUCHI YOSHIO |
| description | Fluorescent probes represented by the general formula (I) wherein R and R are each hydrogen or a substituent for capturing a proton, a metal ion, or an active oxygen species; R is a monovalent substituent except hydrogen, carboxyl, and sulfo; R and R are each hydrogen, halogeno, or alkyl; R to R are each alkyl; R and R are each hydrogen, halogeno, or alkyl; M is a counter ion; and before the capture of a proton, a metal ion, or an active oxygen species, the combination of R , R , and R gives the benzene ring to which they are bonded such a substantially high electron density as to make the compound substantially nonfluorescent, while after the capture of a proton, a metal ion, or an active oxygen species, the combination brings about such a substantial lowering in the electron density of the benzene ring to which they are bonded as to make the compound substantially highly fluorescent. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN1798874A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN1798874A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN1798874A3</originalsourceid><addsrcrecordid>eNrjZJByLUnOSMwrUUjMS1FIBbIz89IVclNLMvJTeBhY0xJzilN5oTQ3g7yba4izh25qQX58anFBYnJqXmpJvLOfobmlhYW5iaMxYRUArTAiEg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Etchant and etching method</title><source>esp@cenet</source><creator>SAITO NORIYUKI,YOSHIDA TAKUJI,INOUE KAZUNORI,ISHIKAWA MAKOTO,KAMIHARAGUCHI YOSHIO</creator><creatorcontrib>SAITO NORIYUKI,YOSHIDA TAKUJI,INOUE KAZUNORI,ISHIKAWA MAKOTO,KAMIHARAGUCHI YOSHIO</creatorcontrib><description>Fluorescent probes represented by the general formula (I) wherein R and R are each hydrogen or a substituent for capturing a proton, a metal ion, or an active oxygen species; R is a monovalent substituent except hydrogen, carboxyl, and sulfo; R and R are each hydrogen, halogeno, or alkyl; R to R are each alkyl; R and R are each hydrogen, halogeno, or alkyl; M<-> is a counter ion; and before the capture of a proton, a metal ion, or an active oxygen species, the combination of R , R , and R gives the benzene ring to which they are bonded such a substantially high electron density as to make the compound substantially nonfluorescent, while after the capture of a proton, a metal ion, or an active oxygen species, the combination brings about such a substantial lowering in the electron density of the benzene ring to which they are bonded as to make the compound substantially highly fluorescent.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; SEMICONDUCTOR DEVICES</subject><creationdate>2006</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060705&DB=EPODOC&CC=CN&NR=1798874A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060705&DB=EPODOC&CC=CN&NR=1798874A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SAITO NORIYUKI,YOSHIDA TAKUJI,INOUE KAZUNORI,ISHIKAWA MAKOTO,KAMIHARAGUCHI YOSHIO</creatorcontrib><title>Etchant and etching method</title><description>Fluorescent probes represented by the general formula (I) wherein R and R are each hydrogen or a substituent for capturing a proton, a metal ion, or an active oxygen species; R is a monovalent substituent except hydrogen, carboxyl, and sulfo; R and R are each hydrogen, halogeno, or alkyl; R to R are each alkyl; R and R are each hydrogen, halogeno, or alkyl; M<-> is a counter ion; and before the capture of a proton, a metal ion, or an active oxygen species, the combination of R , R , and R gives the benzene ring to which they are bonded such a substantially high electron density as to make the compound substantially nonfluorescent, while after the capture of a proton, a metal ion, or an active oxygen species, the combination brings about such a substantial lowering in the electron density of the benzene ring to which they are bonded as to make the compound substantially highly fluorescent.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2006</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJByLUnOSMwrUUjMS1FIBbIz89IVclNLMvJTeBhY0xJzilN5oTQ3g7yba4izh25qQX58anFBYnJqXmpJvLOfobmlhYW5iaMxYRUArTAiEg</recordid><startdate>20060705</startdate><enddate>20060705</enddate><creator>SAITO NORIYUKI,YOSHIDA TAKUJI,INOUE KAZUNORI,ISHIKAWA MAKOTO,KAMIHARAGUCHI YOSHIO</creator><scope>EVB</scope></search><sort><creationdate>20060705</creationdate><title>Etchant and etching method</title><author>SAITO NORIYUKI,YOSHIDA TAKUJI,INOUE KAZUNORI,ISHIKAWA MAKOTO,KAMIHARAGUCHI YOSHIO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN1798874A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2006</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SAITO NORIYUKI,YOSHIDA TAKUJI,INOUE KAZUNORI,ISHIKAWA MAKOTO,KAMIHARAGUCHI YOSHIO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SAITO NORIYUKI,YOSHIDA TAKUJI,INOUE KAZUNORI,ISHIKAWA MAKOTO,KAMIHARAGUCHI YOSHIO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Etchant and etching method</title><date>2006-07-05</date><risdate>2006</risdate><abstract>Fluorescent probes represented by the general formula (I) wherein R and R are each hydrogen or a substituent for capturing a proton, a metal ion, or an active oxygen species; R is a monovalent substituent except hydrogen, carboxyl, and sulfo; R and R are each hydrogen, halogeno, or alkyl; R to R are each alkyl; R and R are each hydrogen, halogeno, or alkyl; M<-> is a counter ion; and before the capture of a proton, a metal ion, or an active oxygen species, the combination of R , R , and R gives the benzene ring to which they are bonded such a substantially high electron density as to make the compound substantially nonfluorescent, while after the capture of a proton, a metal ion, or an active oxygen species, the combination brings about such a substantial lowering in the electron density of the benzene ring to which they are bonded as to make the compound substantially highly fluorescent.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_CN1798874A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES |
| title | Etchant and etching method |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T17%3A36%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SAITO%20NORIYUKI,YOSHIDA%20TAKUJI,INOUE%20KAZUNORI,ISHIKAWA%20MAKOTO,KAMIHARAGUCHI%20YOSHIO&rft.date=2006-07-05&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN1798874A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |