Method for mfg. large power MOS tube with small wire wide slot type structure

The invention discloses a method for manufacturing small-linewidth grooved high-power MOS tube, adopting titanium alloy process to reduce the effect of contact hole injection on device characteristics and the contact resistance, and adopting chemical-mechanical polishing and leveling process to redu...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	ZHIWEI,JU CHEN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!