Semiconductor device, full-wave rectifier circuit and half-wave rectifier circuit

Unnecessary leakage current to a semiconductor substrate is prevented when a forward current flows through a diode. An N-type well region is formed in a surface of a P-type semiconductor substrate. A P-type well region is formed in the N-type well region. An N+-type diffusion layer is formed in a su...

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1. Verfasser:	GOSHIMA KAZUTOMO,SAITO HIROSHI,FUKUDA YOSHIYUKI,NAKAZAWA TSUTOMU
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS BASIC ELECTRIC ELEMENTS CONTROL OR REGULATION THEREOF CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERATION SEMICONDUCTOR DEVICES
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creator	GOSHIMA KAZUTOMO,SAITO HIROSHI,FUKUDA YOSHIYUKI,NAKAZAWA TSUTOMU
description	Unnecessary leakage current to a semiconductor substrate is prevented when a forward current flows through a diode. An N-type well region is formed in a surface of a P-type semiconductor substrate. A P-type well region is formed in the N-type well region. An N+-type diffusion layer is formed in a surface of the N-type well region outside the P-type well region. A P+-type diffusion layer and an N+-type diffusion layer are formed in a surface of the P-type well region. The N+-type diffusion layer formed in the surface of the N-type well region is electrically connected with the P+-type diffusion layer formed in the surface of the P-type well region with a wiring made of aluminum, for example. An anode electrode is connected with the wiring. Also, a cathode electrode is connected with the N+-type diffusion layer.
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An N-type well region is formed in a surface of a P-type semiconductor substrate. A P-type well region is formed in the N-type well region. An N+-type diffusion layer is formed in a surface of the N-type well region outside the P-type well region. A P+-type diffusion layer and an N+-type diffusion layer are formed in a surface of the P-type well region. The N+-type diffusion layer formed in the surface of the N-type well region is electrically connected with the P+-type diffusion layer formed in the surface of the P-type well region with a wiring made of aluminum, for example. An anode electrode is connected with the wiring. 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subjects	APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS BASIC ELECTRIC ELEMENTS CONTROL OR REGULATION THEREOF CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERATION SEMICONDUCTOR DEVICES
title	Semiconductor device, full-wave rectifier circuit and half-wave rectifier circuit
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