Semiconductor devices including high-k dielectric materials and methods of forming the same

A semiconductor device includes a first conductive layer on a semiconductor substrate, a dielectric layer including a high-k dielectric material on the first conductive layer, a second conductive layer including polysilicon doped with P-type impurities on the dielectric layer, and a third conductive...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	YOUN SUN-PIL,LEE CHANG-WON,SOHN WOONG-HEE,CHOI GIL-HEYUN,YOO JONG-RYEOL,LIM DONGAN,PARK JAE-HWA,LEE BYUNG-HAK,PARK HEE-SOOK
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!