Multi-bit non-volatile memory device and method therefor

A multi-bit non-volatile memory device includes a charge storage layer (14) sandwiched between two insulating layers (12 and 16) formed on a semiconductor substrate (10). A thick oxide layer (18) is formed over the charge storage layer (14) and a minimum feature sized hole is etched in the thick oxi...

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Bibliographische Detailangaben

1. Verfasser:	SADD MICHAEL,WHITE BRUCE E.,SWIFT CRAIG T
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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