Thin film transistor and method of fabricating the same
The present invention provides a thin film transistor in which a semiconductor layer and a gate insulation film of the thin film transistor are formed by depositing a second insulation film on a polycrystalline silicon layer pattern and a first insulation film pattern that were formed by first cryst...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | The present invention provides a thin film transistor in which a semiconductor layer and a gate insulation film of the thin film transistor are formed by depositing a second insulation film on a polycrystalline silicon layer pattern and a first insulation film pattern that were formed by first crystallizing and then patterning an amorphous silicon layer covered by a continuously formed first insulation layer or first patterning and then crystallizing a previously formed amorphous silicon layer covered by a continuously formed first insulation film that is a part of the gate insulation film, and a method for fabricating the thin film transistor. |
|---|