Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

A phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protru...

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1. Verfasser:	SONG YOON-JONG,HWANG YOUNG-NAM,NAM SANG-DON,CHO SUNG-LAE,KOH GWAN-HYEOB,LEE CHOONG-MAN,KUH BONG-JIN,HA YONG-HO,LEE SU-YOUN,JEONG CHANG-WOOK,YI JI-HYE,RYOO KYUNGANG,LEE SE-HO,AHN SU-JIN,PARK SOON-OH
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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