Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same
A phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protru...
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| creator | SONG YOON-JONG,HWANG YOUNG-NAM,NAM SANG-DON,CHO SUNG-LAE,KOH GWAN-HYEOB,LEE CHOONG-MAN,KUH BONG-JIN,HA YONG-HO,LEE SU-YOUN,JEONG CHANG-WOOK,YI JI-HYE,RYOO KYUNGANG,LEE SE-HO,AHN SU-JIN,PARK SOON-OH |
| description | A phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protrusion portion vertically extending from a top surface thereof. The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern. |
| format | Patent |
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In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protrusion portion vertically extending from a top surface thereof. The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2005</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20051130&DB=EPODOC&CC=CN&NR=1702883A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25568,76551</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20051130&DB=EPODOC&CC=CN&NR=1702883A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SONG YOON-JONG,HWANG YOUNG-NAM,NAM SANG-DON,CHO SUNG-LAE,KOH GWAN-HYEOB,LEE CHOONG-MAN,KUH BONG-JIN,HA YONG-HO,LEE SU-YOUN,JEONG CHANG-WOOK,YI JI-HYE,RYOO KYUNGANG,LEE SE-HO,AHN SU-JIN,PARK SOON-OH</creatorcontrib><title>Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same</title><description>A phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. 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The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2005</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqFy7sKwkAQRuE0FqI-g_MACmoK00pQrGy0D-PkT3ZhLyGzBlL65ipY2Fmd5jvT7HmFtxJD_ZAUe6oxWIGS4cGGljrDChLDoQV5-NiPJHBOVwQHSX0MVkhHTfBK8J2L4-dLBqTsQRzq95dMrJViQw3feyucfs08mzTsFItvZ9nydLyV5zW6WEE7FgSkqrxs95tdUeSH_L94AbYMSSQ</recordid><startdate>20051130</startdate><enddate>20051130</enddate><creator>SONG YOON-JONG,HWANG YOUNG-NAM,NAM SANG-DON,CHO SUNG-LAE,KOH GWAN-HYEOB,LEE CHOONG-MAN,KUH BONG-JIN,HA YONG-HO,LEE SU-YOUN,JEONG CHANG-WOOK,YI JI-HYE,RYOO KYUNGANG,LEE SE-HO,AHN SU-JIN,PARK SOON-OH</creator><scope>EVB</scope></search><sort><creationdate>20051130</creationdate><title>Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same</title><author>SONG YOON-JONG,HWANG YOUNG-NAM,NAM SANG-DON,CHO SUNG-LAE,KOH GWAN-HYEOB,LEE CHOONG-MAN,KUH BONG-JIN,HA YONG-HO,LEE SU-YOUN,JEONG CHANG-WOOK,YI JI-HYE,RYOO KYUNGANG,LEE SE-HO,AHN SU-JIN,PARK SOON-OH</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN1702883A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2005</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SONG YOON-JONG,HWANG YOUNG-NAM,NAM SANG-DON,CHO SUNG-LAE,KOH GWAN-HYEOB,LEE CHOONG-MAN,KUH BONG-JIN,HA YONG-HO,LEE SU-YOUN,JEONG CHANG-WOOK,YI JI-HYE,RYOO KYUNGANG,LEE SE-HO,AHN SU-JIN,PARK SOON-OH</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SONG YOON-JONG,HWANG YOUNG-NAM,NAM SANG-DON,CHO SUNG-LAE,KOH GWAN-HYEOB,LEE CHOONG-MAN,KUH BONG-JIN,HA YONG-HO,LEE SU-YOUN,JEONG CHANG-WOOK,YI JI-HYE,RYOO KYUNGANG,LEE SE-HO,AHN SU-JIN,PARK SOON-OH</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same</title><date>2005-11-30</date><risdate>2005</risdate><abstract>A phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protrusion portion vertically extending from a top surface thereof. The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same |
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