Thin films and methods for forming thin films utilizing ECAE-targets
The invention includes methods of forming a barrier layer. Material is ablated from an ECAE target to form a layer having a thickness variance of less than or equal to 1% of 1-sigma across a substrate surface. The invention includes a method of forming a tunnel junction. A thin film is formed betwee...
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| creator | GLASS HOWARD L ALFORD FRANK FERRASSE STEPHANE |
| description | The invention includes methods of forming a barrier layer. Material is ablated from an ECAE target to form a layer having a thickness variance of less than or equal to 1% of 1-sigma across a substrate surface. The invention includes a method of forming a tunnel junction. A thin film is formed between first and second magnetic layers. The thin film, the first magnetic layer, and/or the second magnetic layer are formed by ablating material from an ECAE target to provide improved layer thickness uniformity relative to corresponding layers formed utilizing non-ECAE targets. The invention includes a physical vapor deposition target and a thin film formed using the target. The target contains an alloy of aluminum and at least one alloying element selected from Ga, Zr and In. The resulting film has a thickness variance across the thin film of less than 1.5% of 1-sigma. |
| format | Patent |
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Material is ablated from an ECAE target to form a layer having a thickness variance of less than or equal to 1% of 1-sigma across a substrate surface. The invention includes a method of forming a tunnel junction. A thin film is formed between first and second magnetic layers. The thin film, the first magnetic layer, and/or the second magnetic layer are formed by ablating material from an ECAE target to provide improved layer thickness uniformity relative to corresponding layers formed utilizing non-ECAE targets. The invention includes a physical vapor deposition target and a thin film formed using the target. The target contains an alloy of aluminum and at least one alloying element selected from Ga, Zr and In. The resulting film has a thickness variance across the thin film of less than 1.5% of 1-sigma.</description><edition>7</edition><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2005</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050824&DB=EPODOC&CC=CN&NR=1659304A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050824&DB=EPODOC&CC=CN&NR=1659304A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GLASS HOWARD L</creatorcontrib><creatorcontrib>ALFORD FRANK</creatorcontrib><creatorcontrib>FERRASSE STEPHANE</creatorcontrib><title>Thin films and methods for forming thin films utilizing ECAE-targets</title><description>The invention includes methods of forming a barrier layer. Material is ablated from an ECAE target to form a layer having a thickness variance of less than or equal to 1% of 1-sigma across a substrate surface. The invention includes a method of forming a tunnel junction. A thin film is formed between first and second magnetic layers. The thin film, the first magnetic layer, and/or the second magnetic layer are formed by ablating material from an ECAE target to provide improved layer thickness uniformity relative to corresponding layers formed utilizing non-ECAE targets. The invention includes a physical vapor deposition target and a thin film formed using the target. The target contains an alloy of aluminum and at least one alloying element selected from Ga, Zr and In. 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Material is ablated from an ECAE target to form a layer having a thickness variance of less than or equal to 1% of 1-sigma across a substrate surface. The invention includes a method of forming a tunnel junction. A thin film is formed between first and second magnetic layers. The thin film, the first magnetic layer, and/or the second magnetic layer are formed by ablating material from an ECAE target to provide improved layer thickness uniformity relative to corresponding layers formed utilizing non-ECAE targets. The invention includes a physical vapor deposition target and a thin film formed using the target. The target contains an alloy of aluminum and at least one alloying element selected from Ga, Zr and In. The resulting film has a thickness variance across the thin film of less than 1.5% of 1-sigma.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Thin films and methods for forming thin films utilizing ECAE-targets |
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