Mfg method of contact hole and mfg method of semiconductor element

The method includes following structure: first, forming several conduction structures on substrate provided; next, carrying out step of ion implantation; then, carrying out heat process in order to form lining on sidewall of conduction structure and on surface of substructure uncovered by conduction...

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Bibliographische Detailangaben

Hauptverfasser:	FANGYU YE, JUNZHE CHEN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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