Electrostatic discharge protective circuit structure and manufacturing method thereof

A buried layer is formed in the substrate of the electrostatic discharge protection circuit and is conncted to the sinker layer. Thus, when the electrostatic discharge protection circuit is activated, the current through a source eletrode feeds to the buried layer, the sinker layer to the drain elec...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: CUNLAI XU, TIANHAO TANG, XIAOXIAN CHEN
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator CUNLAI XU
TIANHAO TANG
XIAOXIAN CHEN
description A buried layer is formed in the substrate of the electrostatic discharge protection circuit and is conncted to the sinker layer. Thus, when the electrostatic discharge protection circuit is activated, the current through a source eletrode feeds to the buried layer, the sinker layer to the drain electrode. Since the current flows through the substrate, thus the current path is far apart from the grid dielectric layer to prevent influence on the grid electrode from large current as well as enhance obdurability of the electrostatic discharge protection circuit.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN1455453A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN1455453A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN1455453A3</originalsourceid><addsrcrecordid>eNqFijEOwjAMALMwIOAN-AMMqM0DUFXExARzZTlOE6lNIsfh_YDEznQ63W3Nc1yYVHJV1EjgYqWAMjMUyfop8cVAUahFharSSJswYHKwYmoevx7TDCtryA40sHD2e7PxuFQ-_Lgzx-v4GG4nLnniWpA4sU7D_dxb29vu0v0_3qgMOaw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Electrostatic discharge protective circuit structure and manufacturing method thereof</title><source>esp@cenet</source><creator>CUNLAI XU ; TIANHAO TANG ; XIAOXIAN CHEN</creator><creatorcontrib>CUNLAI XU ; TIANHAO TANG ; XIAOXIAN CHEN</creatorcontrib><description>A buried layer is formed in the substrate of the electrostatic discharge protection circuit and is conncted to the sinker layer. Thus, when the electrostatic discharge protection circuit is activated, the current through a source eletrode feeds to the buried layer, the sinker layer to the drain electrode. Since the current flows through the substrate, thus the current path is far apart from the grid dielectric layer to prevent influence on the grid electrode from large current as well as enhance obdurability of the electrostatic discharge protection circuit.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20031112&amp;DB=EPODOC&amp;CC=CN&amp;NR=1455453A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20031112&amp;DB=EPODOC&amp;CC=CN&amp;NR=1455453A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CUNLAI XU</creatorcontrib><creatorcontrib>TIANHAO TANG</creatorcontrib><creatorcontrib>XIAOXIAN CHEN</creatorcontrib><title>Electrostatic discharge protective circuit structure and manufacturing method thereof</title><description>A buried layer is formed in the substrate of the electrostatic discharge protection circuit and is conncted to the sinker layer. Thus, when the electrostatic discharge protection circuit is activated, the current through a source eletrode feeds to the buried layer, the sinker layer to the drain electrode. Since the current flows through the substrate, thus the current path is far apart from the grid dielectric layer to prevent influence on the grid electrode from large current as well as enhance obdurability of the electrostatic discharge protection circuit.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqFijEOwjAMALMwIOAN-AMMqM0DUFXExARzZTlOE6lNIsfh_YDEznQ63W3Nc1yYVHJV1EjgYqWAMjMUyfop8cVAUahFharSSJswYHKwYmoevx7TDCtryA40sHD2e7PxuFQ-_Lgzx-v4GG4nLnniWpA4sU7D_dxb29vu0v0_3qgMOaw</recordid><startdate>20031112</startdate><enddate>20031112</enddate><creator>CUNLAI XU</creator><creator>TIANHAO TANG</creator><creator>XIAOXIAN CHEN</creator><scope>EVB</scope></search><sort><creationdate>20031112</creationdate><title>Electrostatic discharge protective circuit structure and manufacturing method thereof</title><author>CUNLAI XU ; TIANHAO TANG ; XIAOXIAN CHEN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN1455453A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2003</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>CUNLAI XU</creatorcontrib><creatorcontrib>TIANHAO TANG</creatorcontrib><creatorcontrib>XIAOXIAN CHEN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CUNLAI XU</au><au>TIANHAO TANG</au><au>XIAOXIAN CHEN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Electrostatic discharge protective circuit structure and manufacturing method thereof</title><date>2003-11-12</date><risdate>2003</risdate><abstract>A buried layer is formed in the substrate of the electrostatic discharge protection circuit and is conncted to the sinker layer. Thus, when the electrostatic discharge protection circuit is activated, the current through a source eletrode feeds to the buried layer, the sinker layer to the drain electrode. Since the current flows through the substrate, thus the current path is far apart from the grid dielectric layer to prevent influence on the grid electrode from large current as well as enhance obdurability of the electrostatic discharge protection circuit.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_CN1455453A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Electrostatic discharge protective circuit structure and manufacturing method thereof
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T07%3A51%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CUNLAI%20XU&rft.date=2003-11-12&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN1455453A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true