Organosilicate resins as hardmasks for organic polymer dielectrics in fabrication of microelectronic devices
This invention is a method comprising providing a substrate, forming a first layer on the substrate, wherein the first layer has a dielectric constant of less than 3.0 and comprises an organic polymer, applying an organosilicate resin over the first layer, removing a portion of the organosilicate re...
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| creator | WAETERLOOS JOOST J. M TOWNSEND PAUL H WILSON LARRY R.? MILLS LYNNE K GOMBAR-FETNER SHEILA HETZNER JACK E SHAFFER EDWARD O HOWARD KEVIN E |
| description | This invention is a method comprising providing a substrate, forming a first layer on the substrate, wherein the first layer has a dielectric constant of less than 3.0 and comprises an organic polymer, applying an organosilicate resin over the first layer, removing a portion of the organosilicate resin to expose a portion of the first layer, and removing the exposed portions of the first layer. The invention is also an integrated circuit article comprising an active substrate containing transistors and an electrical interconnect structure containing a pattern of metal lines separated, at least partially, by layers or regions of an organic polymeric material having a dielectric constant of less than 3.0 and further comprising a layer of an organosilicate resin above at least one layer of the organic polymer material. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN1447981BB</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN1447981BB</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN1447981BB3</originalsourceid><addsrcrecordid>eNqNzDEKwkAQheE0FqLeYS5gEQyobYJipY19GGdndXB3J8wEwdtL0ANYveZ7_7xKF7tjUZckhCODsUtxQIcHWsjoT4eoBjoxIRg0vTMbBOHENJqQgxSIeLMpIFpAI2Qh0y_Q6RX4JcS-rGYRk_Pqt4sKjodrd1rzoD37gMSFx747102z3e_qtt38QT4pvUKF</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Organosilicate resins as hardmasks for organic polymer dielectrics in fabrication of microelectronic devices</title><source>esp@cenet</source><creator>WAETERLOOS JOOST J. M ; TOWNSEND PAUL H ; WILSON LARRY R.? ; MILLS LYNNE K ; GOMBAR-FETNER SHEILA ; HETZNER JACK E ; SHAFFER EDWARD O ; HOWARD KEVIN E</creator><creatorcontrib>WAETERLOOS JOOST J. M ; TOWNSEND PAUL H ; WILSON LARRY R.? ; MILLS LYNNE K ; GOMBAR-FETNER SHEILA ; HETZNER JACK E ; SHAFFER EDWARD O ; HOWARD KEVIN E</creatorcontrib><description>This invention is a method comprising providing a substrate, forming a first layer on the substrate, wherein the first layer has a dielectric constant of less than 3.0 and comprises an organic polymer, applying an organosilicate resin over the first layer, removing a portion of the organosilicate resin to expose a portion of the first layer, and removing the exposed portions of the first layer. The invention is also an integrated circuit article comprising an active substrate containing transistors and an electrical interconnect structure containing a pattern of metal lines separated, at least partially, by layers or regions of an organic polymeric material having a dielectric constant of less than 3.0 and further comprising a layer of an organosilicate resin above at least one layer of the organic polymer material.</description><language>chi ; eng</language><subject>AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G ; APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CINEMATOGRAPHY ; COMPOSITIONS BASED THEREON ; COMPOSITIONS OF MACROMOLECULAR COMPOUNDS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; GENERAL PROCESSES OF COMPOUNDING ; HOLOGRAPHY ; MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS ; MATERIALS THEREFOR ; METALLURGY ; ORGANIC MACROMOLECULAR COMPOUNDS ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES ; THEIR PREPARATION OR CHEMICAL WORKING-UP ; WORKING-UP</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130807&DB=EPODOC&CC=CN&NR=1447981B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130807&DB=EPODOC&CC=CN&NR=1447981B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WAETERLOOS JOOST J. M</creatorcontrib><creatorcontrib>TOWNSEND PAUL H</creatorcontrib><creatorcontrib>WILSON LARRY R.?</creatorcontrib><creatorcontrib>MILLS LYNNE K</creatorcontrib><creatorcontrib>GOMBAR-FETNER SHEILA</creatorcontrib><creatorcontrib>HETZNER JACK E</creatorcontrib><creatorcontrib>SHAFFER EDWARD O</creatorcontrib><creatorcontrib>HOWARD KEVIN E</creatorcontrib><title>Organosilicate resins as hardmasks for organic polymer dielectrics in fabrication of microelectronic devices</title><description>This invention is a method comprising providing a substrate, forming a first layer on the substrate, wherein the first layer has a dielectric constant of less than 3.0 and comprises an organic polymer, applying an organosilicate resin over the first layer, removing a portion of the organosilicate resin to expose a portion of the first layer, and removing the exposed portions of the first layer. The invention is also an integrated circuit article comprising an active substrate containing transistors and an electrical interconnect structure containing a pattern of metal lines separated, at least partially, by layers or regions of an organic polymeric material having a dielectric constant of less than 3.0 and further comprising a layer of an organosilicate resin above at least one layer of the organic polymer material.</description><subject>AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G</subject><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CINEMATOGRAPHY</subject><subject>COMPOSITIONS BASED THEREON</subject><subject>COMPOSITIONS OF MACROMOLECULAR COMPOUNDS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>GENERAL PROCESSES OF COMPOUNDING</subject><subject>HOLOGRAPHY</subject><subject>MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS</subject><subject>MATERIALS THEREFOR</subject><subject>METALLURGY</subject><subject>ORGANIC MACROMOLECULAR COMPOUNDS</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><subject>WORKING-UP</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNzDEKwkAQheE0FqLeYS5gEQyobYJipY19GGdndXB3J8wEwdtL0ANYveZ7_7xKF7tjUZckhCODsUtxQIcHWsjoT4eoBjoxIRg0vTMbBOHENJqQgxSIeLMpIFpAI2Qh0y_Q6RX4JcS-rGYRk_Pqt4sKjodrd1rzoD37gMSFx747102z3e_qtt38QT4pvUKF</recordid><startdate>20130807</startdate><enddate>20130807</enddate><creator>WAETERLOOS JOOST J. M</creator><creator>TOWNSEND PAUL H</creator><creator>WILSON LARRY R.?</creator><creator>MILLS LYNNE K</creator><creator>GOMBAR-FETNER SHEILA</creator><creator>HETZNER JACK E</creator><creator>SHAFFER EDWARD O</creator><creator>HOWARD KEVIN E</creator><scope>EVB</scope></search><sort><creationdate>20130807</creationdate><title>Organosilicate resins as hardmasks for organic polymer dielectrics in fabrication of microelectronic devices</title><author>WAETERLOOS JOOST J. M ; TOWNSEND PAUL H ; WILSON LARRY R.? ; MILLS LYNNE K ; GOMBAR-FETNER SHEILA ; HETZNER JACK E ; SHAFFER EDWARD O ; HOWARD KEVIN E</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN1447981BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2013</creationdate><topic>AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G</topic><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CINEMATOGRAPHY</topic><topic>COMPOSITIONS BASED THEREON</topic><topic>COMPOSITIONS OF MACROMOLECULAR COMPOUNDS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>GENERAL PROCESSES OF COMPOUNDING</topic><topic>HOLOGRAPHY</topic><topic>MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS</topic><topic>MATERIALS THEREFOR</topic><topic>METALLURGY</topic><topic>ORGANIC MACROMOLECULAR COMPOUNDS</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>THEIR PREPARATION OR CHEMICAL WORKING-UP</topic><topic>WORKING-UP</topic><toplevel>online_resources</toplevel><creatorcontrib>WAETERLOOS JOOST J. M</creatorcontrib><creatorcontrib>TOWNSEND PAUL H</creatorcontrib><creatorcontrib>WILSON LARRY R.?</creatorcontrib><creatorcontrib>MILLS LYNNE K</creatorcontrib><creatorcontrib>GOMBAR-FETNER SHEILA</creatorcontrib><creatorcontrib>HETZNER JACK E</creatorcontrib><creatorcontrib>SHAFFER EDWARD O</creatorcontrib><creatorcontrib>HOWARD KEVIN E</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WAETERLOOS JOOST J. M</au><au>TOWNSEND PAUL H</au><au>WILSON LARRY R.?</au><au>MILLS LYNNE K</au><au>GOMBAR-FETNER SHEILA</au><au>HETZNER JACK E</au><au>SHAFFER EDWARD O</au><au>HOWARD KEVIN E</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Organosilicate resins as hardmasks for organic polymer dielectrics in fabrication of microelectronic devices</title><date>2013-08-07</date><risdate>2013</risdate><abstract>This invention is a method comprising providing a substrate, forming a first layer on the substrate, wherein the first layer has a dielectric constant of less than 3.0 and comprises an organic polymer, applying an organosilicate resin over the first layer, removing a portion of the organosilicate resin to expose a portion of the first layer, and removing the exposed portions of the first layer. The invention is also an integrated circuit article comprising an active substrate containing transistors and an electrical interconnect structure containing a pattern of metal lines separated, at least partially, by layers or regions of an organic polymeric material having a dielectric constant of less than 3.0 and further comprising a layer of an organosilicate resin above at least one layer of the organic polymer material.</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON COMPOSITIONS OF MACROMOLECULAR COMPOUNDS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY GENERAL PROCESSES OF COMPOUNDING HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP WORKING-UP |
| title | Organosilicate resins as hardmasks for organic polymer dielectrics in fabrication of microelectronic devices |
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