Making process of channel separating zone

The method for making channel isolation region is characterized by that it utilizes microimage and etching process to limit a channel isolation region, and utilizes preparation of spacing wall to form a spacing wall between two sides of channel isolatiion region to eliminate sharp crossover angle between the channel isolation region and an adjacent active region on the silicon base material, and further increase etching process window of next gate-pole polycrystalline silicon, reduce residue of polycrystalline silicon in said cross over angle and can reduce the danger of gate-pole short circuit.