electric charge generating semiconductor substrate bump forming device, method of removing electric charge from electric charge generating semiconductor substrate
The present invention provides a bump forming apparatus (101, 501) which can prevent charge appearance semiconductor substrates (201, 202) from pyroelectric breakdown and physical failures, a method carried out by the bump forming apparatus for removing charge of charge appearance semiconductor subs...
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| creator | NARITA SHORIKI TSUBOI YASUTAKA IKEYA MASAHARU |
| description | The present invention provides a bump forming apparatus (101, 501) which can prevent charge appearance semiconductor substrates (201, 202) from pyroelectric breakdown and physical failures, a method carried out by the bump forming apparatus for removing charge of charge appearance semiconductor substrates, a charge removing unit for charge appearance semiconductor substrates, and a charge appearance semiconductor substrate. At least when the wafer is cooled after the bump bonding to the wafer, electric charge accumulated to the wafer (202) because of the cooling is removed through direct contact with a post-forming bumps heating device (170), or the charge is removed by a decrease in temperature control that charge can be removed in a noncontact state. Therefore an amount of charge of the wafer can be reduced in comparison with the conventional art, so that the wafer is prevented from pyroelectric breakdown and damage such as a break or the like to the wafer itself. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN1359534A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN1359534A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN1359534A3</originalsourceid><addsrcrecordid>eNqVjTEOgkAQRWksjHoG5wBaGKSwJERjZWVPluEvbMIyZHbhQJ5USKxsjNUv3sv76-SFDhzVMXFrtAE16KEmur6hAO9Y-nrkKEphrEKcCaga_UBW1C9SjckxDuQRW6lJLCm8TAv6TlsVT___bZOVNV3A7rObZH-7Pov7EYOUCIPhORHL4nFKs0uWnvP0t_EGn21W0w</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>electric charge generating semiconductor substrate bump forming device, method of removing electric charge from electric charge generating semiconductor substrate</title><source>esp@cenet</source><creator>NARITA SHORIKI ; TSUBOI YASUTAKA ; IKEYA MASAHARU</creator><creatorcontrib>NARITA SHORIKI ; TSUBOI YASUTAKA ; IKEYA MASAHARU</creatorcontrib><description>The present invention provides a bump forming apparatus (101, 501) which can prevent charge appearance semiconductor substrates (201, 202) from pyroelectric breakdown and physical failures, a method carried out by the bump forming apparatus for removing charge of charge appearance semiconductor substrates, a charge removing unit for charge appearance semiconductor substrates, and a charge appearance semiconductor substrate. At least when the wafer is cooled after the bump bonding to the wafer, electric charge accumulated to the wafer (202) because of the cooling is removed through direct contact with a post-forming bumps heating device (170), or the charge is removed by a decrease in temperature control that charge can be removed in a noncontact state. Therefore an amount of charge of the wafer can be reduced in comparison with the conventional art, so that the wafer is prevented from pyroelectric breakdown and damage such as a break or the like to the wafer itself.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20020717&DB=EPODOC&CC=CN&NR=1359534A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20020717&DB=EPODOC&CC=CN&NR=1359534A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NARITA SHORIKI</creatorcontrib><creatorcontrib>TSUBOI YASUTAKA</creatorcontrib><creatorcontrib>IKEYA MASAHARU</creatorcontrib><title>electric charge generating semiconductor substrate bump forming device, method of removing electric charge from electric charge generating semiconductor substrate</title><description>The present invention provides a bump forming apparatus (101, 501) which can prevent charge appearance semiconductor substrates (201, 202) from pyroelectric breakdown and physical failures, a method carried out by the bump forming apparatus for removing charge of charge appearance semiconductor substrates, a charge removing unit for charge appearance semiconductor substrates, and a charge appearance semiconductor substrate. At least when the wafer is cooled after the bump bonding to the wafer, electric charge accumulated to the wafer (202) because of the cooling is removed through direct contact with a post-forming bumps heating device (170), or the charge is removed by a decrease in temperature control that charge can be removed in a noncontact state. Therefore an amount of charge of the wafer can be reduced in comparison with the conventional art, so that the wafer is prevented from pyroelectric breakdown and damage such as a break or the like to the wafer itself.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2002</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqVjTEOgkAQRWksjHoG5wBaGKSwJERjZWVPluEvbMIyZHbhQJ5USKxsjNUv3sv76-SFDhzVMXFrtAE16KEmur6hAO9Y-nrkKEphrEKcCaga_UBW1C9SjckxDuQRW6lJLCm8TAv6TlsVT___bZOVNV3A7rObZH-7Pov7EYOUCIPhORHL4nFKs0uWnvP0t_EGn21W0w</recordid><startdate>20020717</startdate><enddate>20020717</enddate><creator>NARITA SHORIKI</creator><creator>TSUBOI YASUTAKA</creator><creator>IKEYA MASAHARU</creator><scope>EVB</scope></search><sort><creationdate>20020717</creationdate><title>electric charge generating semiconductor substrate bump forming device, method of removing electric charge from electric charge generating semiconductor substrate</title><author>NARITA SHORIKI ; TSUBOI YASUTAKA ; IKEYA MASAHARU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN1359534A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2002</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>NARITA SHORIKI</creatorcontrib><creatorcontrib>TSUBOI YASUTAKA</creatorcontrib><creatorcontrib>IKEYA MASAHARU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NARITA SHORIKI</au><au>TSUBOI YASUTAKA</au><au>IKEYA MASAHARU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>electric charge generating semiconductor substrate bump forming device, method of removing electric charge from electric charge generating semiconductor substrate</title><date>2002-07-17</date><risdate>2002</risdate><abstract>The present invention provides a bump forming apparatus (101, 501) which can prevent charge appearance semiconductor substrates (201, 202) from pyroelectric breakdown and physical failures, a method carried out by the bump forming apparatus for removing charge of charge appearance semiconductor substrates, a charge removing unit for charge appearance semiconductor substrates, and a charge appearance semiconductor substrate. At least when the wafer is cooled after the bump bonding to the wafer, electric charge accumulated to the wafer (202) because of the cooling is removed through direct contact with a post-forming bumps heating device (170), or the charge is removed by a decrease in temperature control that charge can be removed in a noncontact state. Therefore an amount of charge of the wafer can be reduced in comparison with the conventional art, so that the wafer is prevented from pyroelectric breakdown and damage such as a break or the like to the wafer itself.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | electric charge generating semiconductor substrate bump forming device, method of removing electric charge from electric charge generating semiconductor substrate |
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