Method for producing semiconductor memory component

The invention relates to a method for fabricating a semiconductor memory component, in particular a DRAM or FeRAM having a silicon substrate. The lower electrode of a storage capacitor is insulated from the silicon substrate by a barrier layer. The barrier layer is patterned using a hard mask, in pa...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	F. KREUPL, V. WEINRICH, M. ENGELHARDT
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!