Method for producing semiconductor memory component

Method for producing semiconductor memory component

The invention relates to a method for fabricating a semiconductor memory component, in particular a DRAM or FeRAM having a silicon substrate. The lower electrode of a storage capacitor is insulated from the silicon substrate by a barrier layer. The barrier layer is patterned using a hard mask, in pa...

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Hauptverfasser: F. KREUPL, V. WEINRICH, M. ENGELHARDT
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator F. KREUPL
V. WEINRICH
M. ENGELHARDT
description The invention relates to a method for fabricating a semiconductor memory component, in particular a DRAM or FeRAM having a silicon substrate. The lower electrode of a storage capacitor is insulated from the silicon substrate by a barrier layer. The barrier layer is patterned using a hard mask, in particular, made from SiO2, SiN, SiON, before the storage capacitor is applied, and the mask layer which remains after the patterning is removed so as to uncover the patterned barrier layer. The invention provides for the patterned barrier layer to be embedded in SiO2 by means of CVD (chemical vapor deposition) prior to the removal of the remaining mask layer, and for the remaining mask layer, together with the SiO2 embedding, to be removed from the surface of the barrier layer using an SiO2-CMP (chemical mechanical polishing) process.
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The invention provides for the patterned barrier layer to be embedded in SiO2 by means of CVD (chemical vapor deposition) prior to the removal of the remaining mask layer, and for the remaining mask layer, together with the SiO2 embedding, to be removed from the surface of the barrier layer using an SiO2-CMP (chemical mechanical polishing) process.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20020619&amp;DB=EPODOC&amp;CC=CN&amp;NR=1354887A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20020619&amp;DB=EPODOC&amp;CC=CN&amp;NR=1354887A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>F. 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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method for producing semiconductor memory component
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