Method of reducing capacitance across inner leads

The method and structure are, to form an oxide layer and a first barrier layer on each metal interconnector, then to deposit an internal metal electrolytic layer on the first barrier layer, which is grinded to the first barrier layer by chemical-mechanical grinding method and eached within thickness...

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1. Verfasser:	BINGCHANG WU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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