Method and apparatus for providing embedded flash-EEPROM technology

Exemplary embodiments are directed to providing a flash EEPROM technology which is compatible with deep submicron dimensions, and which is suitable for straightforward integration with high performance logic technologies. Unlike known technologies, exemplary embodiments provide a reduced cell area s...

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Hauptverfasser:	J.A. CUNNINGHAM, R.A. BLANCHARD
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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creator	J.A. CUNNINGHAM R.A. BLANCHARD
description	Exemplary embodiments are directed to providing a flash EEPROM technology which is compatible with deep submicron dimensions, and which is suitable for straightforward integration with high performance logic technologies. Unlike known technologies, exemplary embodiments provide a reduced cell area size in a split gate cell structure. An exemplary process for implementing a flash EEPROM in accordance with the present invention involves growing a tunneling oxide in a manner which reduces tunneling barrier height, and requires minimum perturabition to conventional high performance logic technologies, without compromising logic function performance.
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BLANCHARD</creatorcontrib><description>Exemplary embodiments are directed to providing a flash EEPROM technology which is compatible with deep submicron dimensions, and which is suitable for straightforward integration with high performance logic technologies. Unlike known technologies, exemplary embodiments provide a reduced cell area size in a split gate cell structure. 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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
title	Method and apparatus for providing embedded flash-EEPROM technology
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