Trech MIS device with active trench coreners and thick bottom oxide and method of making same

A trench MOSFET (40) includes active corner regions (25) and a thick insulative layer (33) centrally located at the bottom of the trench (19). A thin gate insulative layer (15) lines the sidewall and peripheral portion of the bottom surface of the trench (19). A gate (14) fills the trench, adjacent...

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Bibliographische Detailangaben

1. Verfasser:	MOHANED N. DARWISH,CHRISTINA YUE,FREDERICK P. GILES
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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