Procedure for producing isolation region with shallow groove possessing protection layer for rim angle

Procedure for producing isolation region with shallow groove possessing protection layer for rim angle

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1. Verfasser: YINHUI,HUANG LIN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Procedure for producing isolation region with shallow groove possessing protection layer for rim angle
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