Method for producing contacts and solar cells and solar cells
The invention relates to a solar cell, and to a method of manufacturing a solar cell. The method comprises: forming a first alloy of a first metal and a first dopant, wherein the first dopant is capable of doping a semicondutive material to be of a first type; applying the first alloy to a first sur...
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| creator | D. L. MEIER,H. P. DAVIS |
| description | The invention relates to a solar cell, and to a method of manufacturing a solar cell. The method comprises:
forming a first alloy of a first metal and a first dopant, wherein the first dopant is capable of doping a semicondutive material to be of a first type;
applying the first alloy to a first surface of a first semiconductor, wherein the first semiconductor has been doped to be a semiconductive material of a second type and the second type is opposite to that of the first type;
heating the first alloy and the first semiconductor above a first temperature point such that at least a portion of the first alloy and a portion of the first semiconductor form a molten second alloy;
cooling the second alloy such that at least a portion of the first dopant, contained in the molten second alloy, is incorporated into an epitaxial regrowth region of the first semiconductor, wherein at least a portion of the epitaxial regrowth region forms a rectifying junction with the first semiconductor and wherein at least a portion of the rectifying junction is exposable to solar radiation that has not passed through the epitaxial regrowth region;
cooling the second alloy to below the first temperature point wherein the second alloy becomes a solid first contact with ohmic electrical contact to at least a portion of the regrowth region; and
applying an ohmic contact to the first semiconductor to form a second electrical contact of the solar cell. |
| format | Patent |
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forming a first alloy of a first metal and a first dopant, wherein the first dopant is capable of doping a semicondutive material to be of a first type;
applying the first alloy to a first surface of a first semiconductor, wherein the first semiconductor has been doped to be a semiconductive material of a second type and the second type is opposite to that of the first type;
heating the first alloy and the first semiconductor above a first temperature point such that at least a portion of the first alloy and a portion of the first semiconductor form a molten second alloy;
cooling the second alloy such that at least a portion of the first dopant, contained in the molten second alloy, is incorporated into an epitaxial regrowth region of the first semiconductor, wherein at least a portion of the epitaxial regrowth region forms a rectifying junction with the first semiconductor and wherein at least a portion of the rectifying junction is exposable to solar radiation that has not passed through the epitaxial regrowth region;
cooling the second alloy to below the first temperature point wherein the second alloy becomes a solid first contact with ohmic electrical contact to at least a portion of the regrowth region; and
applying an ohmic contact to the first semiconductor to form a second electrical contact of the solar cell.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2005</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20051207&DB=EPODOC&CC=CN&NR=1230920C$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20051207&DB=EPODOC&CC=CN&NR=1230920C$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>D. L. MEIER,H. P. DAVIS</creatorcontrib><title>Method for producing contacts and solar cells and solar cells</title><description>The invention relates to a solar cell, and to a method of manufacturing a solar cell. The method comprises:
forming a first alloy of a first metal and a first dopant, wherein the first dopant is capable of doping a semicondutive material to be of a first type;
applying the first alloy to a first surface of a first semiconductor, wherein the first semiconductor has been doped to be a semiconductive material of a second type and the second type is opposite to that of the first type;
heating the first alloy and the first semiconductor above a first temperature point such that at least a portion of the first alloy and a portion of the first semiconductor form a molten second alloy;
cooling the second alloy such that at least a portion of the first dopant, contained in the molten second alloy, is incorporated into an epitaxial regrowth region of the first semiconductor, wherein at least a portion of the epitaxial regrowth region forms a rectifying junction with the first semiconductor and wherein at least a portion of the rectifying junction is exposable to solar radiation that has not passed through the epitaxial regrowth region;
cooling the second alloy to below the first temperature point wherein the second alloy becomes a solid first contact with ohmic electrical contact to at least a portion of the regrowth region; and
applying an ohmic contact to the first semiconductor to form a second electrical contact of the solar cell.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2005</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD1TS3JyE9RSMsvUigoyk8pTc7MS1dIzs8rSUwuKVZIzEtRKM7PSSxSSE7NycHg8zCwpiXmFKfyQmluBgU31xBnD93Ugvz41OKCxOTUvNSSeGc_QyNjA0sjA2dnYyKUAACngi-O</recordid><startdate>20051207</startdate><enddate>20051207</enddate><creator>D. L. MEIER,H. P. DAVIS</creator><scope>EVB</scope></search><sort><creationdate>20051207</creationdate><title>Method for producing contacts and solar cells and solar cells</title><author>D. L. MEIER,H. P. DAVIS</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN1230920CC3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2005</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>D. L. MEIER,H. P. DAVIS</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>D. L. MEIER,H. P. DAVIS</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for producing contacts and solar cells and solar cells</title><date>2005-12-07</date><risdate>2005</risdate><abstract>The invention relates to a solar cell, and to a method of manufacturing a solar cell. The method comprises:
forming a first alloy of a first metal and a first dopant, wherein the first dopant is capable of doping a semicondutive material to be of a first type;
applying the first alloy to a first surface of a first semiconductor, wherein the first semiconductor has been doped to be a semiconductive material of a second type and the second type is opposite to that of the first type;
heating the first alloy and the first semiconductor above a first temperature point such that at least a portion of the first alloy and a portion of the first semiconductor form a molten second alloy;
cooling the second alloy such that at least a portion of the first dopant, contained in the molten second alloy, is incorporated into an epitaxial regrowth region of the first semiconductor, wherein at least a portion of the epitaxial regrowth region forms a rectifying junction with the first semiconductor and wherein at least a portion of the rectifying junction is exposable to solar radiation that has not passed through the epitaxial regrowth region;
cooling the second alloy to below the first temperature point wherein the second alloy becomes a solid first contact with ohmic electrical contact to at least a portion of the regrowth region; and
applying an ohmic contact to the first semiconductor to form a second electrical contact of the solar cell.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Method for producing contacts and solar cells and solar cells |
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