Time-detection device and time-detection method by using semi-conductor element

A time recording device employs a floating gate cell, wherein an ON layer structure or an ONO layer structure is provided between floating gate and control gate. A charge injection unit is provided to inject charges into the floating gate electrode and into the nitride layer of the ON structure or t...

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1. Verfasser:	H. PALM,E. WOHLRAB,H. TADDIKEN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHECKING-DEVICES COIN-FREED OR LIKE APPARATUS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY HOROLOGY PHYSICS SEMICONDUCTOR DEVICES TIME-INTERVAL MEASURING
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creator	H. PALM,E. WOHLRAB,H. TADDIKEN
description	A time recording device employs a floating gate cell, wherein an ON layer structure or an ONO layer structure is provided between floating gate and control gate. A charge injection unit is provided to inject charges into the floating gate electrode and into the nitride layer of the ON structure or the ONO structure by applying a voltage or voltage pulses to the control gate electrode, a center of concentration of the charges injected into the nitride layer being located at the interface between oxide layer and nitride layer of the layer sequence. The time recording device also includes a unit for recording a time which has elapsed since charge injection on the basis of changes in the transmission behavior of the channel region caused by a shift in the center of concentration of the charges in the nitride layer away from the interface.
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TADDIKEN</creatorcontrib><description>A time recording device employs a floating gate cell, wherein an ON layer structure or an ONO layer structure is provided between floating gate and control gate. A charge injection unit is provided to inject charges into the floating gate electrode and into the nitride layer of the ON structure or the ONO structure by applying a voltage or voltage pulses to the control gate electrode, a center of concentration of the charges injected into the nitride layer being located at the interface between oxide layer and nitride layer of the layer sequence. 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subjects	BASIC ELECTRIC ELEMENTS CHECKING-DEVICES COIN-FREED OR LIKE APPARATUS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY HOROLOGY PHYSICS SEMICONDUCTOR DEVICES TIME-INTERVAL MEASURING
title	Time-detection device and time-detection method by using semi-conductor element
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