Non-volatile memory assembly with multiple gate-pole insulation layers

Non-volatile memory assembly with multiple gate-pole insulation layers

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Hauptverfasser: DAOZHENG LU, ZUOHONG FAN, ZHENGSHENG PAN
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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ZHENGSHENG PAN
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Non-volatile memory assembly with multiple gate-pole insulation layers
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