Semiconductor structure and forming method thereof

Semiconductor structures and methods are provided. A semiconductor structure according to the present disclosure includes a semiconductor substrate, a high Kappa dielectric layer disposed on the semiconductor substrate, a first plurality of nanostructures disposed over the high Kappa dielectric layer, an intermediate dielectric layer disposed over the first plurality of nanostructures, a second plurality of nanostructures disposed over the intermediate dielectric layer, a first gate structure surrounds the first plurality of nanostructures, and a second gate structure surrounds the second plurality of nanostructures. The high Kappa dielectric layer includes a metal nitride, a metal oxide, silicon carbide, graphene, or diamond. The embodiment of the invention also provides a method for forming the semiconductor structure. 提供了半导体结构和方法。根据本公开的半导体结构包括半导体衬底、设置在半导体衬底上的高Kappa介电层、设置在高Kappa介电层上方的第一多个纳米结构、设置在第一多个纳米结构上方的中间介电层，位于中间介电层上方的第二多个纳米结构，环绕第一多个纳米结构的第一栅极结构，环绕第二多个纳米结构的第二栅极结构。高Kappa介电层包括金属氮化物、金属氧化物、碳化硅、石墨烯或金刚石。本公开的实施