Metal etching method

The invention provides a metal etching method, which comprises the following steps of: providing a semiconductor device, forming a metal layer on the surface of the semiconductor device, and forming a grain boundary gap on the surface of the metal layer; photoresist is coated on the surface of the m...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SHEN XIANQING, WANG ZEYU, LI DONG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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