Programming method of nonvolatile memory

A programming method of a nonvolatile memory, the memory comprising: at least one memory cell, the memory cell comprising a P well and an N well adjacent to each other in a deep N well, a first PMOS transistor and an NMOS capacitor respectively located in the N well and the P well, a floating gate covering the PMOS transistor and the NMOS capacitor; wherein the first PMOS transistor in the storage unit is programmed in a band-to-band tunneling mode. According to the programming method, a high-driving charge pump is not needed, and the programming method is more competitive in the application of low-power-consumption and small-capacity memories. 一种非易失性存储器的编程方法，所述存储器包含：至少一个存储单元，所述存储单元包含：位于一个深N阱中的相邻的P阱和N阱，第一PMOS晶体管和NMOS电容分别位于N阱和P阱中，一个浮栅覆在所述PMOS晶体管和NMOS电容上；其中存储单元中的第一PMOS晶体管通过带带隧穿方式进行编程。本发明的编程方法，不需要高驱动电荷泵，在低功耗、小容量存储器的应用中更具竞争力。