Semiconductor device
A semiconductor device includes a semiconductor substrate having a first main surface and a second main surface, a plurality of interlayer dielectric films, and a plurality of wiring layers stacked on the first main surface. Each of the plurality of interlayer dielectric films is interposed between...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | YAMAMOTO YUKI ARIE HIROYUKI |
| description | A semiconductor device includes a semiconductor substrate having a first main surface and a second main surface, a plurality of interlayer dielectric films, and a plurality of wiring layers stacked on the first main surface. Each of the plurality of interlayer dielectric films is interposed between two adjacent ones of the plurality of wiring layers and between one of the plurality of wiring layers closest to the first main surface in the first direction and the first main surface. A trench recessed toward the second main surface is formed on the first main surface. The groove includes a linear portion extending in the second direction. The plurality of wiring layers has a first wiring layer farthest from the first main surface in the first direction and a second wiring layer farthest from the first main surface adjacent to the first wiring layer in the first direction.
一种半导体器件，包括：具有第一主表面和第二主表面的半导体衬底、多个层间介电膜和堆叠在第一主表面上的多个布线层。多个层间介电膜中的每个层间介电膜插入多个布线层中的两个相邻布线层之间以及在第一方向上最靠近第一主表面的多个布线层中的一个布线层与第一主表面之间。朝向第二主表面凹陷的沟槽形成 |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN118629980A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN118629980A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN118629980A3</originalsourceid><addsrcrecordid>eNrjZBAJTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGFmZGlpYWBo7GxKgBAGAfIQI</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device</title><source>esp@cenet</source><creator>YAMAMOTO YUKI ; ARIE HIROYUKI</creator><creatorcontrib>YAMAMOTO YUKI ; ARIE HIROYUKI</creatorcontrib><description>A semiconductor device includes a semiconductor substrate having a first main surface and a second main surface, a plurality of interlayer dielectric films, and a plurality of wiring layers stacked on the first main surface. Each of the plurality of interlayer dielectric films is interposed between two adjacent ones of the plurality of wiring layers and between one of the plurality of wiring layers closest to the first main surface in the first direction and the first main surface. A trench recessed toward the second main surface is formed on the first main surface. The groove includes a linear portion extending in the second direction. The plurality of wiring layers has a first wiring layer farthest from the first main surface in the first direction and a second wiring layer farthest from the first main surface adjacent to the first wiring layer in the first direction.
一种半导体器件，包括：具有第一主表面和第二主表面的半导体衬底、多个层间介电膜和堆叠在第一主表面上的多个布线层。多个层间介电膜中的每个层间介电膜插入多个布线层中的两个相邻布线层之间以及在第一方向上最靠近第一主表面的多个布线层中的一个布线层与第一主表面之间。朝向第二主表面凹陷的沟槽形成</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240910&DB=EPODOC&CC=CN&NR=118629980A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25565,76548</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240910&DB=EPODOC&CC=CN&NR=118629980A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YAMAMOTO YUKI</creatorcontrib><creatorcontrib>ARIE HIROYUKI</creatorcontrib><title>Semiconductor device</title><description>A semiconductor device includes a semiconductor substrate having a first main surface and a second main surface, a plurality of interlayer dielectric films, and a plurality of wiring layers stacked on the first main surface. Each of the plurality of interlayer dielectric films is interposed between two adjacent ones of the plurality of wiring layers and between one of the plurality of wiring layers closest to the first main surface in the first direction and the first main surface. A trench recessed toward the second main surface is formed on the first main surface. The groove includes a linear portion extending in the second direction. The plurality of wiring layers has a first wiring layer farthest from the first main surface in the first direction and a second wiring layer farthest from the first main surface adjacent to the first wiring layer in the first direction.
一种半导体器件，包括：具有第一主表面和第二主表面的半导体衬底、多个层间介电膜和堆叠在第一主表面上的多个布线层。多个层间介电膜中的每个层间介电膜插入多个布线层中的两个相邻布线层之间以及在第一方向上最靠近第一主表面的多个布线层中的一个布线层与第一主表面之间。朝向第二主表面凹陷的沟槽形成</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGFmZGlpYWBo7GxKgBAGAfIQI</recordid><startdate>20240910</startdate><enddate>20240910</enddate><creator>YAMAMOTO YUKI</creator><creator>ARIE HIROYUKI</creator><scope>EVB</scope></search><sort><creationdate>20240910</creationdate><title>Semiconductor device</title><author>YAMAMOTO YUKI ; ARIE HIROYUKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN118629980A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>YAMAMOTO YUKI</creatorcontrib><creatorcontrib>ARIE HIROYUKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YAMAMOTO YUKI</au><au>ARIE HIROYUKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device</title><date>2024-09-10</date><risdate>2024</risdate><abstract>A semiconductor device includes a semiconductor substrate having a first main surface and a second main surface, a plurality of interlayer dielectric films, and a plurality of wiring layers stacked on the first main surface. Each of the plurality of interlayer dielectric films is interposed between two adjacent ones of the plurality of wiring layers and between one of the plurality of wiring layers closest to the first main surface in the first direction and the first main surface. A trench recessed toward the second main surface is formed on the first main surface. The groove includes a linear portion extending in the second direction. The plurality of wiring layers has a first wiring layer farthest from the first main surface in the first direction and a second wiring layer farthest from the first main surface adjacent to the first wiring layer in the first direction.
一种半导体器件，包括：具有第一主表面和第二主表面的半导体衬底、多个层间介电膜和堆叠在第一主表面上的多个布线层。多个层间介电膜中的每个层间介电膜插入多个布线层中的两个相邻布线层之间以及在第一方向上最靠近第一主表面的多个布线层中的一个布线层与第一主表面之间。朝向第二主表面凹陷的沟槽形成</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN118629980A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Semiconductor device |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-18T13%3A37%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YAMAMOTO%20YUKI&rft.date=2024-09-10&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN118629980A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |