Iridium manganese based tunneling magnetoresistive sensing element with tantalum nitride buffer layer to improve thermal stability

The invention relates to an iridium manganese based tunneling magnetoresistive sensing element with a tantalum nitride buffer layer to improve thermal stability. A tunneling magnetoresistance (TMR) sensing element includes a layer stack having a tantalum nitride (TaN) layer; a reference layer system...

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Bibliographische Detailangaben

1. Verfasser:	ANDRES BERND
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS TESTING
Online-Zugang:	Volltext bestellen
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