Iridium manganese based tunneling magnetoresistive sensing element with tantalum nitride buffer layer to improve thermal stability

Iridium manganese based tunneling magnetoresistive sensing element with tantalum nitride buffer layer to improve thermal stability

The invention relates to an iridium manganese based tunneling magnetoresistive sensing element with a tantalum nitride buffer layer to improve thermal stability. A tunneling magnetoresistance (TMR) sensing element includes a layer stack having a tantalum nitride (TaN) layer; a reference layer system...

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1. Verfasser: ANDRES BERND
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MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
TESTING
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description The invention relates to an iridium manganese based tunneling magnetoresistive sensing element with a tantalum nitride buffer layer to improve thermal stability. A tunneling magnetoresistance (TMR) sensing element includes a layer stack having a tantalum nitride (TaN) layer; a reference layer system; a non-magnetic layer having non-magnetic magnetization; and a tunnel barrier layer disposed between the reference layer system and the non-magnetic layer. The reference layer system includes: a pinned layer having a fixed pinned magnetization; a reference layer having a fixed reference magnetization; a coupling intermediate layer disposed between the pinned layer and the reference layer; and a natural antiferromagnetic (NAF) layer including iridium manganese (IrMn), where the NAF layer is formed in direct contact with the TaN layer, where the NAF layer is configured to maintain a fixed pinning magnetization in a first magnetic orientation and a fixed reference magnetization in a second magnetic orientation, and w
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subjects MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
TESTING
title Iridium manganese based tunneling magnetoresistive sensing element with tantalum nitride buffer layer to improve thermal stability
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