Device and method beneficial to PVD (Physical Vapor Deposition) growth of high-quality non-doped epsilon-Ga2O3 film

The invention relates to the technical field of semiconductor material manufacturing, in particular to a device and method beneficial to PVD growth of a high-quality non-doped epsilon-Ga2O3 film. The device comprises a heater, clamps, a high-temperature-resistant elastic piece and a substrate, a heating table is arranged in the center of the heater, the substrate is placed in the heating table, the opposite angles of the heater are connected with the clamps respectively, the elastic piece is fixed between the substrate and the clamps, and the deformation quantity of the elastic piece is changed by changing the positions of the clamps. And the sample holder for placing the target material is connected with the substrate. According to the invention, starting from the lattice strain of epsilon-Ga2O3, the c-axis lattice constant is reduced by using the spring clamp, so that high-quality epsilon-Ga2O3 epitaxy is realized; the lattice distortion is improved through the device, so that the crystal lattice becomes a