Method for cross-scale simulation of low-temperature oxidation process of silicon carbide gate oxide layer

The invention relates to the technical field of integrated circuit manufacturing and device process simulation, in particular to a method for cross-scale simulation of a silicon carbide gate oxide layer low-temperature oxidation process, which comprises the following steps: constructing a Si/SiC sur...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	GUO YUZHENG, YIN CHANGSHUAI, ZHANG ZHAOFU, FENG JIAREN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING IMAGE DATA PROCESSING OR GENERATION, IN GENERAL INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTEDFOR SPECIFIC APPLICATION FIELDS PHYSICS
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