Method for cross-scale simulation of low-temperature oxidation process of silicon carbide gate oxide layer

The invention relates to the technical field of integrated circuit manufacturing and device process simulation, in particular to a method for cross-scale simulation of a silicon carbide gate oxide layer low-temperature oxidation process, which comprises the following steps: constructing a Si/SiC surface model to obtain an optimized interface structure model; according to the optimized interface structure model, establishing a thermal oxidation crystal structure model of Si/SiC, enabling the surface of a Si crystal to be subjected to oxidation reaction to form a SiC gate oxide layer, namely a SiO2 layer, and optimizing to obtain oxidation model data; and performing three-dimensional modeling according to the oxidation model data, constructing a geometric reaction cavity, and adjusting reaction parameters according to a reaction result to be matched with actual production. According to the method, a novel SiC thermal oxidation process method is simulated, the forming process and result of the atomic structure l