Light emitting diode with improved heat dissipation
The invention provides a light emitting diode capable of improving heat dissipation, and belongs to the technical field of photoelectron manufacturing. The light-emitting diode comprises an epitaxial layer, a first passivation layer and a bonding pad layer, the epitaxial layer is provided with a lig...
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| creator | YOU YUNMENG WANG JIA WEI BOLIN TIAN YANHONG LIU ZHANXIANG TIAN YUHANG |
| description | The invention provides a light emitting diode capable of improving heat dissipation, and belongs to the technical field of photoelectron manufacturing. The light-emitting diode comprises an epitaxial layer, a first passivation layer and a bonding pad layer, the epitaxial layer is provided with a light-emitting surface and a backlight surface which are opposite to each other, the first passivation layer is located on the backlight surface, and the bonding pad layer is located on the surface, away from the epitaxial layer, of the first passivation layer; and the ratio of the area of the orthographic projection of the bonding pad layer on the light-emitting surface to the area of the light-emitting surface is greater than or equal to 0.8. According to the embodiment of the invention, the problems of high heating temperature and poor heat dissipation performance of the light-emitting diode can be improved.
本公开提供了一种改善散热的发光二极管，属于光电子制造技术领域。该发光二极管包括：外延层、第一钝化层和焊盘层，所述外延层具有相对的出光面和背光面，所述第一钝化层位于所述背光面上，所述焊盘层位于所述第一钝化层的远离所述外 |
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本公开提供了一种改善散热的发光二极管，属于光电子制造技术领域。该发光二极管包括：外延层、第一钝化层和焊盘层，所述外延层具有相对的出光面和背光面，所述第一钝化层位于所述背光面上，所述焊盘层位于所述第一钝化层的远离所述外</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240903&DB=EPODOC&CC=CN&NR=118588847A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240903&DB=EPODOC&CC=CN&NR=118588847A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YOU YUNMENG</creatorcontrib><creatorcontrib>WANG JIA</creatorcontrib><creatorcontrib>WEI BOLIN</creatorcontrib><creatorcontrib>TIAN YANHONG</creatorcontrib><creatorcontrib>LIU ZHANXIANG</creatorcontrib><creatorcontrib>TIAN YUHANG</creatorcontrib><title>Light emitting diode with improved heat dissipation</title><description>The invention provides a light emitting diode capable of improving heat dissipation, and belongs to the technical field of photoelectron manufacturing. The light-emitting diode comprises an epitaxial layer, a first passivation layer and a bonding pad layer, the epitaxial layer is provided with a light-emitting surface and a backlight surface which are opposite to each other, the first passivation layer is located on the backlight surface, and the bonding pad layer is located on the surface, away from the epitaxial layer, of the first passivation layer; and the ratio of the area of the orthographic projection of the bonding pad layer on the light-emitting surface to the area of the light-emitting surface is greater than or equal to 0.8. According to the embodiment of the invention, the problems of high heating temperature and poor heat dissipation performance of the light-emitting diode can be improved.
本公开提供了一种改善散热的发光二极管，属于光电子制造技术领域。该发光二极管包括：外延层、第一钝化层和焊盘层，所述外延层具有相对的出光面和背光面，所述第一钝化层位于所述背光面上，所述焊盘层位于所述第一钝化层的远离所述外</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD2yUzPKFFIzc0sKcnMS1dIycxPSVUozyzJUMjMLSjKL0tNUchITSwBShQXZxYklmTm5_EwsKYl5hSn8kJpbgZFN9cQZw_d1IL8-NTigsTk1LzUknhnP0NDC1MLCwsTc0djYtQAABOyLMc</recordid><startdate>20240903</startdate><enddate>20240903</enddate><creator>YOU YUNMENG</creator><creator>WANG JIA</creator><creator>WEI BOLIN</creator><creator>TIAN YANHONG</creator><creator>LIU ZHANXIANG</creator><creator>TIAN YUHANG</creator><scope>EVB</scope></search><sort><creationdate>20240903</creationdate><title>Light emitting diode with improved heat dissipation</title><author>YOU YUNMENG ; WANG JIA ; WEI BOLIN ; TIAN YANHONG ; LIU ZHANXIANG ; TIAN YUHANG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN118588847A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>YOU YUNMENG</creatorcontrib><creatorcontrib>WANG JIA</creatorcontrib><creatorcontrib>WEI BOLIN</creatorcontrib><creatorcontrib>TIAN YANHONG</creatorcontrib><creatorcontrib>LIU ZHANXIANG</creatorcontrib><creatorcontrib>TIAN YUHANG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YOU YUNMENG</au><au>WANG JIA</au><au>WEI BOLIN</au><au>TIAN YANHONG</au><au>LIU ZHANXIANG</au><au>TIAN YUHANG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Light emitting diode with improved heat dissipation</title><date>2024-09-03</date><risdate>2024</risdate><abstract>The invention provides a light emitting diode capable of improving heat dissipation, and belongs to the technical field of photoelectron manufacturing. The light-emitting diode comprises an epitaxial layer, a first passivation layer and a bonding pad layer, the epitaxial layer is provided with a light-emitting surface and a backlight surface which are opposite to each other, the first passivation layer is located on the backlight surface, and the bonding pad layer is located on the surface, away from the epitaxial layer, of the first passivation layer; and the ratio of the area of the orthographic projection of the bonding pad layer on the light-emitting surface to the area of the light-emitting surface is greater than or equal to 0.8. According to the embodiment of the invention, the problems of high heating temperature and poor heat dissipation performance of the light-emitting diode can be improved.
本公开提供了一种改善散热的发光二极管，属于光电子制造技术领域。该发光二极管包括：外延层、第一钝化层和焊盘层，所述外延层具有相对的出光面和背光面，所述第一钝化层位于所述背光面上，所述焊盘层位于所述第一钝化层的远离所述外</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Light emitting diode with improved heat dissipation |
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