SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

The present invention suppresses deterioration in manufacturing cost and device characteristics of a semiconductor device. A method of manufacturing a semiconductor device according to an embodiment includes: forming a laser lift-off film over a first semiconductor substrate; forming a thermal diffu...

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Hauptverfasser: KASHIWADA SAORI, NODA MITSUHIKO
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creator KASHIWADA SAORI
NODA MITSUHIKO
description The present invention suppresses deterioration in manufacturing cost and device characteristics of a semiconductor device. A method of manufacturing a semiconductor device according to an embodiment includes: forming a laser lift-off film over a first semiconductor substrate; forming a thermal diffusion layer, which is distributed in a plane parallel to the surface of the first semiconductor substrate inside the laser lift-off film and includes a member having a higher thermal conductivity than the laser lift-off film, when the laser lift-off film is formed; forming a circuit layer including a semiconductor circuit over the laser lift-off film; after the circuit layer is formed, the first semiconductor substrate is attached to the second semiconductor substrate; after the first semiconductor substrate and the second semiconductor substrate are bonded, the back surface of the first semiconductor substrate is irradiated with laser light; and peeling off the first semiconductor substrate such that the circuit la
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN118588623A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN118588623A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN118588623A3</originalsourceid><addsrcrecordid>eNrjZHALdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HUN8fB3UXADivo6-oW6OTqHhAZ5-rkrYNPBw8CalphTnMoLpbkZFN1cQ5w9dFML8uNTiwsSk1PzUkvinf0MDS1MLSzMjIwdjYlRAwDFwiyO</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>KASHIWADA SAORI ; NODA MITSUHIKO</creator><creatorcontrib>KASHIWADA SAORI ; NODA MITSUHIKO</creatorcontrib><description>The present invention suppresses deterioration in manufacturing cost and device characteristics of a semiconductor device. A method of manufacturing a semiconductor device according to an embodiment includes: forming a laser lift-off film over a first semiconductor substrate; forming a thermal diffusion layer, which is distributed in a plane parallel to the surface of the first semiconductor substrate inside the laser lift-off film and includes a member having a higher thermal conductivity than the laser lift-off film, when the laser lift-off film is formed; forming a circuit layer including a semiconductor circuit over the laser lift-off film; after the circuit layer is formed, the first semiconductor substrate is attached to the second semiconductor substrate; after the first semiconductor substrate and the second semiconductor substrate are bonded, the back surface of the first semiconductor substrate is irradiated with laser light; and peeling off the first semiconductor substrate such that the circuit la</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CLADDING OR PLATING BY SOLDERING OR WELDING ; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MACHINE TOOLS ; METAL-WORKING NOT OTHERWISE PROVIDED FOR ; PERFORMING OPERATIONS ; SEMICONDUCTOR DEVICES ; SOLDERING OR UNSOLDERING ; TRANSPORTING ; WELDING ; WORKING BY LASER BEAM</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240903&amp;DB=EPODOC&amp;CC=CN&amp;NR=118588623A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240903&amp;DB=EPODOC&amp;CC=CN&amp;NR=118588623A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KASHIWADA SAORI</creatorcontrib><creatorcontrib>NODA MITSUHIKO</creatorcontrib><title>SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE</title><description>The present invention suppresses deterioration in manufacturing cost and device characteristics of a semiconductor device. A method of manufacturing a semiconductor device according to an embodiment includes: forming a laser lift-off film over a first semiconductor substrate; forming a thermal diffusion layer, which is distributed in a plane parallel to the surface of the first semiconductor substrate inside the laser lift-off film and includes a member having a higher thermal conductivity than the laser lift-off film, when the laser lift-off film is formed; forming a circuit layer including a semiconductor circuit over the laser lift-off film; after the circuit layer is formed, the first semiconductor substrate is attached to the second semiconductor substrate; after the first semiconductor substrate and the second semiconductor substrate are bonded, the back surface of the first semiconductor substrate is irradiated with laser light; and peeling off the first semiconductor substrate such that the circuit la</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CLADDING OR PLATING BY SOLDERING OR WELDING</subject><subject>CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MACHINE TOOLS</subject><subject>METAL-WORKING NOT OTHERWISE PROVIDED FOR</subject><subject>PERFORMING OPERATIONS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SOLDERING OR UNSOLDERING</subject><subject>TRANSPORTING</subject><subject>WELDING</subject><subject>WORKING BY LASER BEAM</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHALdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HUN8fB3UXADivo6-oW6OTqHhAZ5-rkrYNPBw8CalphTnMoLpbkZFN1cQ5w9dFML8uNTiwsSk1PzUkvinf0MDS1MLSzMjIwdjYlRAwDFwiyO</recordid><startdate>20240903</startdate><enddate>20240903</enddate><creator>KASHIWADA SAORI</creator><creator>NODA MITSUHIKO</creator><scope>EVB</scope></search><sort><creationdate>20240903</creationdate><title>SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE</title><author>KASHIWADA SAORI ; NODA MITSUHIKO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN118588623A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CLADDING OR PLATING BY SOLDERING OR WELDING</topic><topic>CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MACHINE TOOLS</topic><topic>METAL-WORKING NOT OTHERWISE PROVIDED FOR</topic><topic>PERFORMING OPERATIONS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SOLDERING OR UNSOLDERING</topic><topic>TRANSPORTING</topic><topic>WELDING</topic><topic>WORKING BY LASER BEAM</topic><toplevel>online_resources</toplevel><creatorcontrib>KASHIWADA SAORI</creatorcontrib><creatorcontrib>NODA MITSUHIKO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KASHIWADA SAORI</au><au>NODA MITSUHIKO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE</title><date>2024-09-03</date><risdate>2024</risdate><abstract>The present invention suppresses deterioration in manufacturing cost and device characteristics of a semiconductor device. A method of manufacturing a semiconductor device according to an embodiment includes: forming a laser lift-off film over a first semiconductor substrate; forming a thermal diffusion layer, which is distributed in a plane parallel to the surface of the first semiconductor substrate inside the laser lift-off film and includes a member having a higher thermal conductivity than the laser lift-off film, when the laser lift-off film is formed; forming a circuit layer including a semiconductor circuit over the laser lift-off film; after the circuit layer is formed, the first semiconductor substrate is attached to the second semiconductor substrate; after the first semiconductor substrate and the second semiconductor substrate are bonded, the back surface of the first semiconductor substrate is irradiated with laser light; and peeling off the first semiconductor substrate such that the circuit la</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
CLADDING OR PLATING BY SOLDERING OR WELDING
CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MACHINE TOOLS
METAL-WORKING NOT OTHERWISE PROVIDED FOR
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
SOLDERING OR UNSOLDERING
TRANSPORTING
WELDING
WORKING BY LASER BEAM
title SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T07%3A43%3A40IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KASHIWADA%20SAORI&rft.date=2024-09-03&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN118588623A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true